International Tables for Crystallography (2006). Vol. C, ch. 3.5, pp. 171-176
doi: 10.1107/97809553602060000589

Chapter 3.5. Preparation of specimens for electron diffraction and electron microscopy

Contents

  • 3.5. Preparation of specimens for electron diffraction and electron microscopy  (pp. 171-176) | html | pdf | chapter contents |
    • 3.5.1. Ceramics and rock minerals  (pp. 171-173) | html | pdf |
      • 3.5.1.1. Thin fragments, particles, and flakes  (p. 171) | html | pdf |
      • 3.5.1.2. Thin-section preparation  (pp. 171-172) | html | pdf |
      • 3.5.1.3. Final thinning by argon-ion etching  (pp. 172-173) | html | pdf |
      • 3.5.1.4. Final thinning by chemical etching  (p. 173) | html | pdf |
      • 3.5.1.5. Evaporated and sputtered thin films  (p. 173) | html | pdf |
    • 3.5.2. Metals  (pp. 173-176) | html | pdf |
      • 3.5.2.1. Thin sections  (p. 174) | html | pdf |
      • 3.5.2.2. Final thinning methods  (pp. 174-175) | html | pdf |
      • 3.5.2.3. Chemical and electrochemical thinning solutions  (pp. 175-176) | html | pdf |
    • 3.5.3. Polymers and organic specimens  (p. 176) | html | pdf |
      • 3.5.3.1. Cast films  (p. 176) | html | pdf |
      • 3.5.3.2. Sublimed films  (p. 176) | html | pdf |
      • 3.5.3.3. Oriented solidification  (p. 176) | html | pdf |
    • References | html | pdf |
    • Figures
      • Fig. 3.5.1.1. The two types of arrangement for final thinning by argon-ion etching  (p. 172) | html | pdf |
      • Fig. 3.5.1.2. Dependence of sputtering rate on the angle of tilt  (p. 172) | html | pdf |
      • Fig. 3.5.3.1. Typical anode current/voltage relationship at fixed temperature under potentiostatic conditions  (p. 175) | html | pdf |
    • Tables
      • Table 3.5.1.1. Chemical etchants used for preparing thin foils from single-crystal ceramic materials  (p. 173) | html | pdf |