International Tables for Crystallography (2006). Vol. C. ch. 4.3, pp. 259-429
https://doi.org/10.1107/97809553602060000593 |
Chapter 4.3. Electron diffraction
Chapter index
Abbe theory 4.3.8.1
Aberrations
coefficients 4.3.8.5
ALCHEMI (atom location by channelling enhanced microanalysis) 4.3.4.4.4
Anatase, high-energy resolution spectra 4.3.4.27
Approximations
Glauber 4.3.3.3
kinematical 4.3.1.3
Moliere high-energy 4.3.1.3
no upper-layer-line 4.3.6.1
phase-grating 4.3.1.3
two-beam 4.3.1.3
Atomic scattering amplitudes 4.3.1.6
Atom location by channelling enhanced microanalysis (ALCHEMI) 4.3.4.4.4
Axial holography 4.3.8.6
Bethe ridge 4.3.4.4.4
Bethe theory for inelastic scattering 4.3.4.4.2
Bloch standing waves 4.3.4.4.4
Bonding electrons, distribution of 4.3.8.4
Born series 4.3.1.1
Castaing–Henry filter 4.3.4.11
CBED disc 4.3.7
Čerenkov radiation 4.3.4.3.3
Column approximation 4.3.6.1
Compton wavelength 4.3.1.3
Computing methods for electron diffraction 4.3.8.5
Correlation energy 4.3.3.3
Critical-voltage effect 4.3.6.2
Cross sections
differential scattering 4.3.1.3
elastic differential scattering 4.3.3.2.1
ionization 4.3.4.4.2
Crystal(s)
misalignment (tilt) 4.3.8.4
Crystalline solids 4.3.1
Debye–Waller factor 4.3.6.2
Deconvolution
techniques 4.3.4.1.3
Defect types, electron diffraction 4.3.8.3
Dielectric description 4.3.4.3.2
Differential scattering cross section 4.3.1.3
Diffuse scattering 4.3.1.5
Drude model 4.3.4.3.2
Dynamical wave amplitudes 4.3.6
Dynamic R factor 4.3.8.6
Elastic differential scattering cross section 4.3.3.2.1
Electron beam, misalignment 4.3.8.4
Electron diffraction 4.3.1
absorption effects 4.3.1.5
boundary conditions 4.3.1.1
computing methods 4.3.8.5
determination of crystal thickness 4.3.7
intensities 4.3.7
measurement of structure factors 4.3.7
patterns 4.3.3.3
scattering factors 4.3.1
structure factors 4.3.7
transmission function 4.3.1.1
useful parameters as a function of accelerating voltage 4.3.2.1
Electron diffractometry 4.3.5.2
Electron energy-loss spectrometry
Castaing–Henry filter 4.3.4.11
crystallographic information from 4.3.4.2.3
Electron energy-loss spectroscopy (EELS) 4.3.4, 4.3.4.1.1, 4.3.4.3, 4.3.4.1.4, 4.3.4.5, 4.3.4.1, 4.3.4.2.1, 4.3.4.2.2, 4.3.4.4.1, 4.3.4.22, 4.3.4.4.1, 4.3.4.4.3, 4.3.4.4.4, 4.3.8.7, 4.3.4.1, 4.3.4.2.1
aberrations in 4.3.4.2.2
analysers for 4.3.4.2.1
detection systems 4.3.4.2.3
monochromators for 4.3.4.2.1
non-characteristic background 4.3.4.1.4
types of excitation in 4.3.4.5
Electron inelastic scattering 4.3.3.2
Electron microscopy 4.3.8
Electron transitions 4.3.1.5
Energy-dispersive
analysis 4.3.8.7
Energy-loss spectrometer 4.3.4.2.1
EXAFS (extended X-ray absorption fine structure) 4.3.4.29
Excitation errors 4.3.6.1
EXELFS (extended electron fine structure) 4.3.4.29
Extended electron fine structure (EXELFS) 4.3.4.29
Extended X-ray absorption fine structure [(E)XAFS] 4.3.4.29
Fibre texture 4.3.5.3
Fine-grained substances, oriented texture patterns 4.3.5.2
Fourier imaging, n-beam 4.3.8.2
Fourier transformation
techniques 4.3.4.1.3
Fresnel diffraction theory 4.3.1.1
Fringe period 4.3.7
Fringe visibility 4.3.8.2
Gaussian fits to X-ray scattering factors 4.3.1.6
Geometrical analysis of oriented texture patterns 4.3.5.2
Germanium, Fermi level 4.3.4.4.1
Germanium film 4.3.4.6
Gibbs instability 4.3.6.1
Glauber approximation 4.3.3.3
Gold, dielectric coefficients 4.3.4.18
Graphite
dielectric functions 4.3.4.19
Heavy metals, Fermi level 4.3.4.4.1
HEED (high-energy electron diffraction) 4.3.5.2
High-angle annular dark-field (HAADF) images 4.3.8.7
High-energy electron diffraction (HEED) 4.3.5.2
Holographic reconstructions 4.3.8.6
Hyper-resolution 4.3.8.6
Imaging plates 4.3.8.5
Indium antimonide, dielectric coefficients 4.3.4.18
Inelastic crystal excitations 4.3.8.4
Inelastic scattering factors for electrons (Table 4.3.3.2) 4.3.3.2
Interband transition 4.3.4.3.2
Intramolecular multiple scattering 4.3.3.3
Ionicity, degree of 4.3.8.4
Ionization cross sections 4.3.4.4.2
Lamellar textures 4.3.5.2
Lattice-fringe images 4.3.8.2
Layer silicates 4.3.5.4
Lorentzian profiles 4.3.4.3.2
Matrix diagonalization 4.3.8.5
Maximum-entropy method 4.3.8.8
Metals
texture studies 4.3.5.4
Microanalysis
quantitative 4.3.4.4.4
Misalignment
of electron beam 4.3.8.4
Misorientation functions 4.3.5.2
Molecular scattering factors 4.3.3.3
Moliere high-energy approximation 4.3.1.3
Monochromators 4.3.4.2.1
Mott–Bethe formula 4.3.1.6
Multiple scattering
intramolecular 4.3.3.3
Poisson distribution 4.3.4.1.3
problems associated with 4.3.4.1.3
n-beam Fourier imaging 4.3.8.2
Neutron scattering
inelastic, in spectroscopy of solids 4.3.4.1.1
Objective-lens defocus 4.3.8.2
Oblique-texture electron difraction patterns 4.3.5.2
Oriented texture patterns 4.3.5
Partial wave phase shifts 4.3.3.2.1
Pauli principle 4.3.4.5
Phase analysis, electron diffraction 4.3.5.1
Phase-grating approximation 4.3.1.3
Phonons 4.3.1.5
Photoabsorption measurements 4.3.4.4.2
Phyllosilicates 4.3.5.3
lifetime 4.3.4.3.1
Poisson distribution 4.3.4.1.3
Polymers
texture studies 4.3.5.4
Polytypism
oriented texture patterns 4.3.5.2
Propagation function 4.3.6.1
Quantitative microanalysis 4.3.4.4.4
Radiation damage 4.3.7
Rayleigh criterion 4.3.8.6
Real crystals 4.3.8.1
Real solids 4.3.4.3.3
Reflection electron microscopy (REM) 4.3.8.7
Reflection high-energy electron diffraction (RHEED) 4.3.8.7
Relativistic corrections 4.3.3.2.2
REM (reflection electron microscopy) 4.3.8.7
R factors
dynamical 4.3.8.6
RHEED (reflection high-energy electron diffraction) 4.3.8.7
Rotation diagrams 4.3.5.3
Sayre's equation 4.3.8.8
Scanning tunnelling microscope 4.3.8.7
Scattering cross sections
elastic differential 4.3.3.2.1
Scattering
diffuse 4.3.1.5
elastic 4.3.6.2
electron 4.3.1
inelastic 4.3.6.2
multiple, deconvolution techniques 4.3.4.1.3
multiple, Poisson distribution 4.3.4.1.3
multiple, problems associated with 4.3.4.1.3
thermal diffuse 4.3.6.2
Scattering factors
complex 4.3.3.2
electron 4.3.1
for electrons, molecular 4.3.3.3
for electrons, partial wave (Table 4.3.3.1) 4.3.3.1
parameterization 4.3.2
X-ray, Gaussian fits 4.3.1.6
X-ray incoherent 4.3.3.2.2
Schrödinger wave equation 4.3.6.2
Selected-area diffraction patterns 4.3.8.8
Semiconductor crystals 4.3.8.7
Solid-state effects 4.3.4.4.3
Solid-state valence-band theory 4.3.6.2
Spectrometers 4.3.4.2.2
Spectroscopy
electron energy-loss 4.3.4.1.1
Spin
polarization 4.3.3.2.1
Structure amplitude, complex 4.3.1.5
Structure factor(s)
measurement by electron diffraction 4.3.7
Structure imaging, electron diffraction 4.3.8.3
Structure refinement 4.3.8.4
Sulfur, Fermi level 4.3.4.4.1
Surface plasmons 4.3.4.3.4
Surface structure 4.3.8.7
Tangent formula 4.3.8.8
TEM (transmission electron microscopy) 4.3.8.7
Thermal diffuse scattering 4.3.6.2
Tilt-series reconstruction method 4.3.8.6
Transition elements, Fermi level 4.3.4.4.1
Transmission electron microscopy (TEM) 4.3.8.7
Transmission function 4.3.6.1
Two-beam approximation 4.3.1.3
Volume
plasmons 4.3.4.3.1
Wave amplitudes, dynamical 4.3.6
Wien filter 4.3.4.2.2
XAFS (extended X-ray absorption fine structure) 4.3.4.29
XANES (X-ray absorption near-edge structure) 4.3.4.29
X-ray diffraction
texture patterns 4.3.5.2
X-ray incoherent scattering factors 4.3.3.2.2
Zero line 4.3.5.3