Figure 3.3.8.2

Hahn, Th.; Klapper, H.

doi:10.1107/97809553602060000644

International
Tables for
Crystallography
Volume D
Physical properties of crystals
Edited by A. Authier

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International Tables for Crystallography (2006). Vol. D. ch. 3.3, p. 419

Figure 3.3.8.2

Th. Hahn^a ^* and H. Klapper^b

^a Institut für Kristallographie, Rheinisch–Westfälische Technische Hochschule, D-52056 Aachen, Germany, and ^bMineralogisch-Petrologisches Institut, Universität Bonn, D-53113 Bonn, Germany
Correspondence e-mail: hahn@xtal.rwth-aachen.de

Figure 3.3.8.2

(a) A (110) silicon slice (10 cm diameter, 0.3 mm thick), cut from a Czochralski-grown tricrystal for solar-cell applications. As seed crystal, a cylinder of three coalesced Si single-crystal sectors in (111) and (221) reflection-twin positions was used. Pulling direction [110] (Courtesy of M. Krühler, Siemens AG, München). (b) Sketch of the tricystal wafer showing the twin relations [twin laws [m(111)] and [m(221)] ] and the $[\Sigma]$ characters of the three domain pairs. The atomic structures of these (111) and (221) twin boundaries are discussed by Kohn (1956, 1958), Hornstra (1959, 1960) and Queisser (1963).