International
Tables for
Crystallography
Volume B
Reciprocal space
Edited by U. Shmueli

International Tables for Crystallography (2006). Vol. B. ch. 4.2, pp. 420-421   | 1 | 2 |

Section 4.2.4.1. Introduction

H. Jagodzinskia and F. Freyb

aInstitut für Kristallographie und Mineralogie, Universität, Theresienstrasse 41, D-8000 München 2, Germany, and  bInstitut für Kristallographie und Mineralogie, Universität, Theresienstrasse 41, D-8000 München 2, Germany

4.2.4.1. Introduction

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In these sections quantitative interpretations of the elastic part of diffuse scattering (X-rays and neutrons) are outlined. Although similar relations are valid, magnetic scattering of neutrons is excluded. Obviously, all disorder phemomena are strongly temperature dependent if thermal equilibrium is reached. Consequently, the interpretation of diffuse scattering should include a statistical thermodynamical treatment. Unfortunately, no quantitative theory for the interpretation of structural phenomena is so far available: all quantitative solutions introduce formal order parameters such as correlation functions or distributions of defects. At low temperatures (low concentration of defects) the distribution function plays the dominant role in diffuse scattering. With increasing temperature the number of defects increases with corresponding strong interactions between them. Therefore, correlations become increasingly important, and phase transformations of first or higher order may occur which need a separate theoretical treatment. In many cases large fluctuations of structural properties occur which are closely related to the dynamical properties of the crystal. Theoretical approximations are possible but their presentation is far beyond the scope of this article. Hence we restrict ourselves to formal parameters in the following.

Point defects or limited structural units, such as molecules, clusters of finite size etc., may only be observed in diffraction for a sufficiently large number of defects. This statement is no longer true in high-resolution electron diffraction where single defects may be observed either by diffraction or by optical imaging if their contrast is high enough. Hence, electron microscopy and diffraction provide valuable methods for the interpretation of disorder phenomena.

The arrangement of a finite assembly of structural defects is described by its structure and its three-dimensional (3D) distribution function. Structures with a strict 1D periodicity (chain-like structures) need a 2D distribution function, while for structures with a 2D periodicity (layers) a 1D distribution function is sufficient. Since the distribution function is the dominant factor in statistics with correlations between defects, we define the dimensionality of disorder as that of the corresponding distribution function. This definition is more effective in diffraction problems because the dimension of the disorder problem determines the dimension of the diffuse scattering: 1D diffuse streaks, 2D diffuse layers, or a general 3D diffuse scattering.

Strictly speaking, completely random distributions cannot be realized as shown in Section 4.2.3.[link] They occur approximately if the following conditions are satisfied.

  • (1) The average volume of all defects including their surrounding strain fields [NcV_{d}] (N = number of unit cells, c = concentration of defects, Vd = volume of the defect with [V_{d}> V_{c}, V_{c}] = volume of the unit cell) is small in comparison with the total volume [NV_{c}] of the crystal, or [V_{c} \gg cV_{d}].

  • (2) Interactions between the defects are negligible. These conditions, however, are valid in very rare cases only, i.e. where small concentrations and vanishing strain fields are present. Remarkable exceptions from this rule are real point defects without interactions, such as isotope distribution (neutron diffraction!), or the system AuAg at high temperature.

As already mentioned, disorder phenomena may be observed in thermal equilibrium. Two completely different cases have to be considered.

  • (1) The concentration of defects is given by the chemical composition, i.e. impurities in a closed system.

  • (2) The number of defects increases with temperature and also depends on pressure or other parameters, i.e. interstitials, voids, static displacements of atoms, stacking faults, dislocations etc.

In many cases the defects do not occur in thermal equilibrium. Nevertheless, their diffuse scattering is temperature dependent because of the anomalous thermal movements at the boundary of the defect. Hence, the observation of a temperature-dependent behaviour of diffuse scattering cannot be taken as a definite criterion of thermal equilibrium without further careful interpretation.

Ordering of defects may take place in a very anisotropic manner. This is demonstrated by the huge number of examples of 1D disorder. As shown by Jagodzinski (1963)[link] this type of disorder cannot occur in thermal equilibrium for the infinite crystal. This type of disorder is generally formed during crystal growth or mechanical deformation. Similar arguments may be applied to 2D disorder. This is a further reason why the so-called Ising model can hardly be used in order to obtain interaction energies of structural defects. From these remarks it becomes clear that order parameters are more or less formal parameters without strict thermodynamical meaning.

The following section is organized as follows: first we discuss the simple case of 1D disorder where reliable solutions of the diffraction problem are available. Intensity calculations of diffuse scattering of 2D disorder by chain-like structures follow. Finally, the 3D case is treated, where formal solutions of the diffraction problem have been tried and applied successfully to metallic systems to some extent. A short concluding section concerns the special phenomenon of orientational disorder.

References

First citation Jagodzinski, H. (1963). On disorder phenomena in crystals. In Crystallography and crystal perfection, edited by G. N. Ramachandran, pp. 177–188. London: Academic Press.Google Scholar








































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