International
Tables for
Crystallography
Volume C
Mathematical, physical and chemical tables
Edited by E. Prince

International Tables for Crystallography (2006). Vol. C. ch. 2.3, p. 61

Table 2.3.3.1 

W. Parrisha and J. I. Langfordb

a IBM Almaden Research Center, San Jose, CA, USA, and bSchool of Physics & Astronomy, University of Birmingham, Birmingham B15 2TT, England

Table 2.3.3.1 | top | pdf |
Preferred-orientation data for silicon

h k l R(Bragg) (%) GP
1 1 1 1.86 −0.11
2 2 0 2.02 −0.11
3 1 1 2.01 0.17
4 0 0 0.86 −0.15
3 3 1 1.73 −0.19
4 2 2 2.43 0.04
5 1 1 1.36 0.19
5 3 1 2.44 −0.08
4 4 2 1.69 −0.19
6 2 0 1.25 0.29
5 3 3 2.40 −0.04
Selected preferred orientation plane.