Figure 3.5.1.1

Tighe, N. J.; Fryer, J. R.; Flower, H. M.

doi:10.1107/97809553602060000589

International
Tables for
Crystallography
Volume C
Mathematical, physical and chemical tables
Edited by E. Prince

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International Tables for Crystallography (2006). Vol. C. ch. 3.5, p. 172

Figure 3.5.1.1

N. J. Tighe,^a J. R. Fryer^b and H. M. Flower^c

^a 42 Lema Lane, Palm Coast, FL 32137-2417, USA,^bDepartment of Chemistry, University of Glasgow, Glasgow G12 8QQ, Scotland, and ^cDepartment of Metallurgy, Imperial College, London SW7, England

Figure 3.5.1.1

The two types of arrangement for final thinning by argon-ion etching. (a) The system of Paulus & Reverchon (1961) with fixed ion sources, made by Alba. (b) The system of Swann with movable ion sources and an airlock for specimen viewing (drawing courtesy of Gatan, Inc.).