Figure 4.2.4.2

Creagh, D. C.; Hubbell, J. H.

doi:10.1107/97809553602060000592

International
Tables for
Crystallography
Volume C
Mathematical, physical and chemical tables
Edited by E. Prince

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International Tables for Crystallography (2006). Vol. C. ch. 4.2, p. 221

Figure 4.2.4.2

D. C. Creagh^b and J. H. Hubbell^d

Figure 4.2.4.2

The total cross section for silicon (Z = 14) compared with the unrenormalized Scofield values. The measured and theoretical attenuation coefficients show systematic differences of several percent for the photon energy range 10 to 100 keV.