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Raman scattering
International Tables for Crystallography (2013). Vol. D, ch. 2.3, pp. 334-348 [ doi:10.1107/97809553602060000913 ]
... with four vectors, one can introduce a fourth-rank tensor I(j), so that the scattering cross section of the jth ... symbols a, b, c, d, e, f, g, h and i in the matrices stand for arbitrary parameters denoting possible independent ... ntherodt, G. (1975-). Editors. Light scattering in solids, Vols. I-IV. Berlin, Heidelberg, New York, Tokyo: Springer. Claus, R., ...
Conclusions
International Tables for Crystallography (2013). Vol. D, Section 2.3.7, pp. 347-348 [ doi:10.1107/97809553602060000913 ]
... ntherodt, G. (1975-). Editors. Light scattering in solids, Vols. I-IV. Berlin, Heidelberg, New York, Tokyo: Springer. Hayes, W. & Loudon ...
Higher-order scattering
International Tables for Crystallography (2013). Vol. D, Section 2.3.6, pp. 346-347 [ doi:10.1107/97809553602060000913 ]
Higher-order scattering 2.3.6. Higher-order scattering In higher-order processes, the scattering involves participation of two or more quanta (j and ) of the elementary excitations. Let us discuss briefly the second-order scattering by phonons, where the energy and wavevector conservation conditions read The combinations of signs in these equations ...
Spatial-dispersion effects
International Tables for Crystallography (2013). Vol. D, Section 2.3.5, pp. 345-346 [ doi:10.1107/97809553602060000913 ]
Spatial-dispersion effects 2.3.5. Spatial-dispersion effects For , the normal modes correspond to a homogeneous phonon displacement pattern (all cells vibrate in phase). Phenomenologically, the q-dependence of Raman tensors can be understood as a kind of morphic effect due to the gradients of the displacement field. Developing the contribution ...
Stress- (strain-) induced Raman scattering
International Tables for Crystallography (2013). Vol. D, Section 2.3.4.4, p. 345 [ doi:10.1107/97809553602060000913 ]
Stress- (strain-) induced Raman scattering 2.3.4.4. Stress- (strain-) induced Raman scattering Stress-induced Raman scattering is an example of the case when the external `force' is a higher-rank tensor. In the case of stress, we deal with a symmetric second-rank tensor. Since symmetric stress (T) and strain (S) tensors ...
[more results from section 2.3.4 in volume D]
-dependent terms
International Tables for Crystallography (2013). Vol. D, Section 2.3.3.6, p. 342 [ doi:10.1107/97809553602060000913 ]
-dependent terms 2.3.3.6. -dependent terms So far, we have not explicitly considered the dependence of the Raman tensor on the magnitude of the scattering wavevector, assuming (the effects of directional dispersion in the case of scattering by polar modes were briefly mentioned in the preceding section). In some cases ...
[more results from section 2.3.3 in volume D]
Experimental aspects
International Tables for Crystallography (2013). Vol. D, Section 2.3.2.3, p. 335 [ doi:10.1107/97809553602060000913 ]
Experimental aspects 2.3.2.3. Experimental aspects In a scattering experiment on crystals, the choice of the scattering geometry implies setting the propagation directions and and the polarization of the incident and scattered light with respect to the crystallographic axes and defining thus the direction of the scattering wavevector q as well as ...
[more results from section 2.3.2 in volume D]
Introduction
International Tables for Crystallography (2013). Vol. D, Section 2.3.1, p. 334 [ doi:10.1107/97809553602060000913 ]
Introduction 2.3.1. Introduction The term Raman scattering, traditionally used for light scattering by molecular vibrations or optical lattice vibrations in crystals, is often applied in a general sense to a vast variety of phenomena of inelastic scattering of photons by various excitations in molecules, solids or liquids. In crystals these excitations ...
Glossary
International Tables for Crystallography (2013). Vol. D, Section 2.3.8, p. 348 [ doi:10.1107/97809553602060000913 ]
Glossary 2.3.8. Glossary : Greek indices are used for Cartesian components of vectors and tensors (summation over repeated indices is understood). atomic displacement Raman tensor of the jth phonon mode, defined as susceptibility derivative (closely related to the electro-optic tensor c velocity of light elastic stiffness tensor piezoelectric tensor susceptibility ...
International Tables for Crystallography (2013). Vol. D, ch. 2.3, pp. 334-348 [ doi:10.1107/97809553602060000913 ]
... with four vectors, one can introduce a fourth-rank tensor I(j), so that the scattering cross section of the jth ... symbols a, b, c, d, e, f, g, h and i in the matrices stand for arbitrary parameters denoting possible independent ... ntherodt, G. (1975-). Editors. Light scattering in solids, Vols. I-IV. Berlin, Heidelberg, New York, Tokyo: Springer. Claus, R., ...
Conclusions
International Tables for Crystallography (2013). Vol. D, Section 2.3.7, pp. 347-348 [ doi:10.1107/97809553602060000913 ]
... ntherodt, G. (1975-). Editors. Light scattering in solids, Vols. I-IV. Berlin, Heidelberg, New York, Tokyo: Springer. Hayes, W. & Loudon ...
Higher-order scattering
International Tables for Crystallography (2013). Vol. D, Section 2.3.6, pp. 346-347 [ doi:10.1107/97809553602060000913 ]
Higher-order scattering 2.3.6. Higher-order scattering In higher-order processes, the scattering involves participation of two or more quanta (j and ) of the elementary excitations. Let us discuss briefly the second-order scattering by phonons, where the energy and wavevector conservation conditions read The combinations of signs in these equations ...
Spatial-dispersion effects
International Tables for Crystallography (2013). Vol. D, Section 2.3.5, pp. 345-346 [ doi:10.1107/97809553602060000913 ]
Spatial-dispersion effects 2.3.5. Spatial-dispersion effects For , the normal modes correspond to a homogeneous phonon displacement pattern (all cells vibrate in phase). Phenomenologically, the q-dependence of Raman tensors can be understood as a kind of morphic effect due to the gradients of the displacement field. Developing the contribution ...
Stress- (strain-) induced Raman scattering
International Tables for Crystallography (2013). Vol. D, Section 2.3.4.4, p. 345 [ doi:10.1107/97809553602060000913 ]
Stress- (strain-) induced Raman scattering 2.3.4.4. Stress- (strain-) induced Raman scattering Stress-induced Raman scattering is an example of the case when the external `force' is a higher-rank tensor. In the case of stress, we deal with a symmetric second-rank tensor. Since symmetric stress (T) and strain (S) tensors ...
[more results from section 2.3.4 in volume D]
-dependent terms
International Tables for Crystallography (2013). Vol. D, Section 2.3.3.6, p. 342 [ doi:10.1107/97809553602060000913 ]
-dependent terms 2.3.3.6. -dependent terms So far, we have not explicitly considered the dependence of the Raman tensor on the magnitude of the scattering wavevector, assuming (the effects of directional dispersion in the case of scattering by polar modes were briefly mentioned in the preceding section). In some cases ...
[more results from section 2.3.3 in volume D]
Experimental aspects
International Tables for Crystallography (2013). Vol. D, Section 2.3.2.3, p. 335 [ doi:10.1107/97809553602060000913 ]
Experimental aspects 2.3.2.3. Experimental aspects In a scattering experiment on crystals, the choice of the scattering geometry implies setting the propagation directions and and the polarization of the incident and scattered light with respect to the crystallographic axes and defining thus the direction of the scattering wavevector q as well as ...
[more results from section 2.3.2 in volume D]
Introduction
International Tables for Crystallography (2013). Vol. D, Section 2.3.1, p. 334 [ doi:10.1107/97809553602060000913 ]
Introduction 2.3.1. Introduction The term Raman scattering, traditionally used for light scattering by molecular vibrations or optical lattice vibrations in crystals, is often applied in a general sense to a vast variety of phenomena of inelastic scattering of photons by various excitations in molecules, solids or liquids. In crystals these excitations ...
Glossary
International Tables for Crystallography (2013). Vol. D, Section 2.3.8, p. 348 [ doi:10.1107/97809553602060000913 ]
Glossary 2.3.8. Glossary : Greek indices are used for Cartesian components of vectors and tensors (summation over repeated indices is understood). atomic displacement Raman tensor of the jth phonon mode, defined as susceptibility derivative (closely related to the electro-optic tensor c velocity of light elastic stiffness tensor piezoelectric tensor susceptibility ...
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